ipb80n04s3-06 IPI80N04S3-06, ipp80n04s3-06 optimos ? -t power-transistor features ? n-channel - enhancement mode ? automotive aec q101 qualified ? msl1 up to 260c peak reflow ? 175c operating temperature ? green package (rohs compliant) ? 100% avalanche tested maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25c, v gs =10v 1) 80 a t c =100 c, v gs =10 v 2) 71 pulsed drain current 2) i d,pulse t c =25 c 320 avalanche energy, single pulse e as i d =80 a 125 mj gate source voltage v gs 20 v power dissipation p tot t c =25 c 100 w operating and storage temperature t j , t stg -55 ... +175 c iec climatic category; din iec 68-1 55/175/56 value v ds 40 v r ds(on),max (smd version) 5.4 m ? i d 80 a product summary pg-to220-3-1 pg-to262-3-1 pg-to263-3-2 type package marking ipb80n04s3-06 pg-to263-3-2 3n0406 IPI80N04S3-06 pg-to262-3-1 3n0406 ipp80n04s3-06 pg-to220-3-1 3n0406 rev. 1.1 page 1 2007-05-03
ipb80n04s3-06 IPI80N04S3-06, ipp80n04s3-06 parameter symbol conditions unit min. typ. max. thermal characteristics 2) thermal resistance, junction - case r thjc - - 1.5 k/w thermal resistance, junction - ambient, leaded r thja --62 smd version, device on pcb r thja minimal footprint - - 62 6 cm 2 cooling area 3) --40 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d = 1 ma 40 - - v gate threshold voltage v gs(th) v ds = v gs , i d =52 a 2.1 3.0 4.0 zero gate voltage drain current i dss v ds =40 v, v gs =0 v, t j =25 c --1a v ds =40 v, v gs =0 v, t j =125 c 2) - - 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - - 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =80 a - 4.6 5.7 m ? v gs =10 v, i d =80 a, smd version - 4.3 5.4 values rev. 1.1 page 2 2007-05-03
ipb80n04s3-06 IPI80N04S3-06, ipp80n04s3-06 parameter symbol conditions unit min. typ. max. d y namic characteristics 2) input capacitance c iss - 2500 3250 pf output capacitance c oss - 660 860 reverse transfer capacitance c rss - 100 130 turn-on delay time t d(on) -15-ns rise time t r -10- turn-off delay time t d(off) -20- fall time t f -10- gate char g e characteristics 2) gate to source charge q gs -1520nc gate to drain charge q gd -916 gate charge total q g -3647 gate plateau voltage v plateau - 6.0 - v reverse diode diode continous forward current 2) i s - - 80 a diode pulse current 2) i s,pulse - - 320 diode forward voltage v sd v gs =0 v, i f =80 a, t j =25 c - 1 1.3 v reverse recovery time 2) t rr v r =20 v, i f = i s , d i f /d t =100 a/s -34-ns reverse recovery charge 2) q rr -36-nc t c =25 c values v gs =0 v, v ds =25 v, f =1 mhz v dd =20 v, v gs =10 v, i d =80 a, r g =6 ? v dd =32 v, i d =80 a, v gs =0 to 10 v 2) defined by design. not subject to production test. 3) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 1) current is limited by bondwire; with an r thjc = 1.5k/w the chip is able to carry 100a at 25c. for detailed information see application note anps071e at www.infineon.com/optimos rev. 1.1 page 3 2007-05-03
ipb80n04s3-06 IPI80N04S3-06, ipp80n04s3-06 1 power dissipation 2 drain current p tot = f( t c ); v gs 6 v i d = f( t c ); v gs 6 v 3 safe operating area 4 max. transient thermal impedance i d = f( v ds ); t c = 25 c; d = 0; smd z thjc = f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 1 10 100 1000 0.1 1 10 100 v ds [v] i d [a] single pulse 0.01 0.05 0.1 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 1 10 0 10 -1 10 -2 10 -3 t p [s] z thjc [k/w] 0 20 40 60 80 100 120 0 50 100 150 200 t c [c] p tot [w] 0 20 40 60 80 100 0 50 100 150 200 t c [c] i d [a] rev. 1.1 page 4 2007-05-03
ipb80n04s3-06 IPI80N04S3-06, ipp80n04s3-06 5 typ. output characteristics 6 typ. drain-source on-state resistance i d = f( v ds ); t j = 25 c; smd r ds(on) = f( i d ); t j = 25 c; smd parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. drain-source on-state resistance i d = f( v gs ); v ds = 6v r ds(on) = f( t j ); i d = 80 a; v gs = 10 v; smd parameter: t j 2 3 4 5 6 7 8 9 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] 5 v 5.5 v 6 v 6.5 v 7 v 10 v 0 40 80 120 160 200 02468 v ds [v] i d [a] 5.5 v 6 v 6.5 v 7 v 10 v 2 4 6 8 10 12 14 16 18 20 0 20 40 60 80 100 120 i d [a] r ds(on) [m ? ] -55 c 25 c 175 c 0 40 80 120 160 200 240 280 320 2345678 v gs [v] i d [a] rev. 1.1 page 5 2007-05-03
ipb80n04s3-06 IPI80N04S3-06, ipp80n04s3-06 9 typ. gate threshold voltage 10 typ. capacitances v gs(th) = f( t j ); v gs = v ds c = f( v ds ); v gs = 0 v; f = 1 mhz parameter: i d 11 typical forward diode characteristicis 12 typ. avalanche characteristics if = f(v sd ) i a s = f( t av ) parameter: t j parameter: t j(start) 25 c 100 c 150 c 1 10 100 1 10 100 1000 t av [s] i av [a] 25 c 175 c 10 3 10 2 10 1 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd [v] i f [a] 52 a 520 a 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] ciss coss crss 10 4 10 1 10 2 10 3 0 5 10 15 20 25 30 v ds [v] c [pf] rev. 1.1 page 6 2007-05-03
ipb80n04s3-06 IPI80N04S3-06, ipp80n04s3-06 13 typical avalanche energy 14 typ. drain-source breakdown voltage e as = f( t j ) v br(dss) = f( t j ); i d = 1 ma parameter: i d 15 typ. gate charge 16 gate charge waveforms v gs = f( q gate ); i d = 80 a pulsed parameter: v dd v gs q gate v gs(th) q g(th) q gs q gd q sw q g 30 35 40 45 50 55 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] 8 v 32 v 0 2 4 6 8 10 12 0 10203040 q gate [nc] v gs [v] 80 a 40 a 20 a 0 100 200 300 400 500 600 25 75 125 175 t j [c] e as [mj] rev. 1.1 page 7 2007-05-03
ipb80n04s3-06 IPI80N04S3-06, ipp80n04s3-06 published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 2007 all rights reserved. legal disclaime r the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non ? infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 1.1 page 8 2007-05-03
ipb80n04s3-06 IPI80N04S3-06, ipp80n04s3-06 revision history version 1.1 1.1 1.1 1.1 1.1 date 30.04.2007 30.04.2007 30.04.2007 30.04.2007 30.04.2007 qgd max from 13nc to 16nc changes rthjc from 1.7k/w to 1.5k/w rdson max ipb from 5.8mohm to 5.4mohm rdson max ipp/i from 6.1mohm to 5.7mohm update of diagrams involving rthjc and rdson_max rev. 1.1 page 9 2007-05-03
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